planar die construction 500mw power dissipation on ceramic pcb general purpose, medium current ideally suited for automated assembly processes maximum ratings characteristic symbol value unit forward voltage (note 2) @ i f = 10ma v f 0.9 v power dissipation (note 1) p d 500 mw thermal resistance, junction to ambient air (note 1) r ja 305 c/w operating and storage temperature range t j, t stg -65 to +150 c notes: 1. device mounted on ceramic pcb; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm 2 . 2. short duration test pulse used to minimize self-heating effect. case: sod-123, plastic ul flammability classification rating 94v-0 polarity: cathode band weight: 0.01 grams (approx.) maximum ratings and electrical characteristics rating at 25 o c ambient temperature unle ss otherwise specified. features mechanical data ? ? ? ? ? ? ? ? sod-123 dimensions in inches and (millimeters) BZT52C2v4-BZT52C39 0.5w zener diodes 0.053(1.35) max. 0.006(0.15) typ. min. 0.010(0.25) min. 0.004(0.10) max. 0.067(1.70) 0.055(1.40) 0.022(0.55) typ. min. 0.152(3.85) 0.140(3.55) 0.112(2.85) 0.100(2.55) http://www.luguang.cn mail:lge@luguang.cn
type number zener voltage range (note 2) maximum zener impedance (note 3) maximum reverse current (note 2) typical temperature coefficient @i ztc mv/c test current i ztc v z @i zt i zt z zt @ i zt z zk @i zk i zk i r @ v r nom (v) min (v) max (v) ma ma ua v min max ma BZT52C2v4 2.4 2.2 2.6 5 100 600 1.0 50 1.0 -3.5 0 5 BZT52C2v7 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5 BZT52C3v0 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5 BZT52C3v3 3.3 3.1 3.5 5 95 600 1.0 5.0 1.0 -3.5 0 5 BZT52C3v6 3.6 3.4 3.8 5 90 600 1.0 5.0 1.0 -3.5 0 5 BZT52C3v9 3.9 3.7 4.1 5 90 600 1.0 3.0 1.0 -3.5 0 5 BZT52C4v3 4.3 4.0 4.6 5 90 600 1.0 3.0 1.0 -3.5 0 5 BZT52C4v7 4.7 4.4 5.0 5 80 500 1.0 3.0 2.0 -3.5 0.2 5 BZT52C5v1 5.1 4.8 5.4 5 60 480 1.0 2.0 2.0 -2.7 1.2 5 BZT52C5v6 5.6 5.2 6.0 5 40 400 1.0 1.0 2.0 -2 2.5 5 BZT52C6v2 6.2 5.8 6.6 5 10 150 1.0 3.0 4.0 0.4 3.7 5 BZT52C6v8 6.8 6.4 7.2 5 15 80 1.0 2.0 4.0 1.2 4.5 5 BZT52C7v5 7.5 7.0 7.9 5 15 80 1.0 1.0 5.0 2.5 5.3 5 BZT52C8v2 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5 BZT52C9v1 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5 BZT52C10 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5 BZT52C11 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5 BZT52C12 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5 BZT52C13 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5 BZT52C15 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 5 BZT52C16 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 5 BZT52C18 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 5 BZT52C20 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5 BZT52C22 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5 BZT52C24 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5 BZT52C27 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2 BZT52C30 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2 BZT52C33 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2 BZT52C36 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 2 BZT52C39 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 2 electrical characteristics notes: 1. device mounted on ceramic pcb; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm 2 . 2. short duration test pulse used to minimize self-heating effect. 3. f = 1khz. BZT52C2v4-BZT52C39 0.5w zener diodes http://www.luguang.cn mail:lge@luguang.cn
0 0.1 0.2 0.3 0.4 0.5 25 05 0 75 100 125 150 p,p o wer dissip ati o n (w) d t , ambient temperature ( c) fig. 1 power dissipation vs ambient temperature a 0.6 0 10 20 30 40 50 01 2 3 4 5 6 7 8910 i , zener c urrent ( ma ) z v , zener voltage (v) fig. 2 zener breakdown characteristics z t = 25c j c2v7 c3v3 c3v9 c4v7 c5v6 c6v8 c8v2 c6v2 test current i 5.0ma z 0 10 20 30 0 i , zener current (ma) z v , zener voltage (v) fi g . 3 zener breakdown characteristics z 10 20 30 40 t = 25c j test current i 5ma z test current i 2ma z c10 c12 c18 c22 c27 c33 c36 c15 0 2 4 6 8 10 10 20 30 40 50 60 70 80 90 100 i , zener current (ma) z v , zener voltage (v) fi g . 4 zener breakdown characteristics z test current i 2ma z c39 t = 25c j c , total capacitance (pf) t 10 100 1000 10 100 1 v , nominal zener voltage (v) fig. 5 total capacitance vs nominal zener voltage z t = 25 c f = 1mhz j v=1v r v=2v r v=1v r v=2v r BZT52C2v4-BZT52C39 0.5w zener diodes
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